The Si8800EDB from Vishay is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 66 to 150 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for Si8800EDB can be seen below.