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Si8800EDB

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Si8800EDB Image

The Si8800EDB from Vishay is a MOSFET with Continous Drain Current 2.8 A, Drain Source Resistance 66 to 150 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for Si8800EDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8800EDB
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.8 A
  • Drain Source Resistance
    66 to 150 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    3.2 nC
  • Power Dissipation
    0.9 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Portable devices such as cell phones, smart phones, and MP3 players - Load switch - Small signal switch

Technical Documents
View details on the manufacturer's website
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