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Si8902AEDB

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The Si8902AEDB from Vishay is a MOSFET with Continous Drain Current 11 A, Drain Source Resistance 21.5 to 37 Milliohm, Drain Source Breakdown Voltage 24 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 0.9 V. Tags: Surface Mount. More details for Si8902AEDB can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si8902AEDB
  • Manufacturer
    Vishay
  • Description
    24 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    11 A
  • Drain Source Resistance
    21.5 to 37 Milliohm
  • Drain Source Breakdown Voltage
    24 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 0.9 V
  • Power Dissipation
    5.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    MICRO FOOT
  • Applications
    Battery protection switch, Bi-directional switch

Technical Documents
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