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SiA906EDJ

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The SiA906EDJ from Vishay is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 37 to 63 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.4 V. Tags: Surface Mount. More details for SiA906EDJ can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiA906EDJ
  • Manufacturer
    Vishay
  • Description
    -12 to 12 V, 7.8 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    37 to 63 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.4 V
  • Gate Charge
    3.5 to 12 nC
  • Power Dissipation
    7.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70
  • Applications
    Load Switch for Portable Applications, High Frequency DC/DC Converter

Technical Documents
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