1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Vishay
  6. SiR800ADP-T1-GE3

SiR800ADP-T1-GE3

Download Datasheet Request Quote

Note : Your request will be directed to Vishay.

SiR800ADP-T1-GE3 Image

The SiR800ADP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 177 A, Drain Source Resistance 1.12 to 4.6 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for SiR800ADP-T1-GE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiR800ADP-T1-GE3
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    177 A
  • Drain Source Resistance
    1.12 to 4.6 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    18.2 to 53 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Synchronous rectification, High power density DC/DC, Synchronous buck converter, Load switching

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products