The VS-ENK025C65S from Vishay is an N-Channel Enhancement Mode Full Bridge MOSFET. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 2.9 V, and a drain-source on-resistance of 59 milli-ohms. This MOSFET has a continuous drain current of up to 29 A and a power dissipation of less than 139 W. It has a patented PressFit pin technology that makes it easy to use, and its exposed Al2O3 substrate with low thermal resistance provides improved thermal performance. This MOSFET helps to minimize stray parameters, allowing for better EMI performance. It is available as a module that measures 62.8 x 33.8 mm.
