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YJP120G08A

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The YJP120G08A from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 3.9 to 4.8 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for YJP120G08A can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJP120G08A
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    3.9 to 4.8 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    73 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Battery protection, Load switch, Uninterruptible power supply

Technical Documents
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