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Junction Field Effect Transistors (JFETs) - Page 2

685 Junction Field Effect Transistors (JFETs) from 16 manufacturers meet your specification.
2SK209 Image
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Toshiba - 2SK209

Junction Field Effect Transistor (JFET) from Toshiba
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Description:0.15 W, 10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
1.2 to 14.0 mA
Power Dissipation:
0.15 W
Operating Temperature:
-55 to 125 Degree C
Package Type:
Surface Mount
Package:
SOT-346
more info
GA20JT12-263 Image
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Navitas Semiconductor - GA20JT12-263

Junction Field Effect Transistor (JFET) from Navitas Semiconductor
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Description:1200 V, 1.3 A, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
20 to 45 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.05 to 0.095 Ohm
Power Dissipation:
56 to 282 W
Gate Charge:
104 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Surface Mount
Package:
TO-263-7L
more info
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New Jersey Semiconductor - PN4392

Junction Field Effect Transistor (JFET) from New Jersey Semiconductor
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Description:0.35 W, -40 V, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.35 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-226AA
more info
2SK596B Image
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KEXIN - 2SK596B

Junction Field Effect Transistor (JFET) from KEXIN
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Description:10 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-20 V
Continous Drain Current:
1 mA
Power Dissipation:
0.1 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
SOT-23
more info
SFU291S.22 Image
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Solid State Devices - SFU291S.22

Junction Field Effect Transistor (JFET) from Solid State Devices
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Description:-30 V, N-Channel Junction Field effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
200 mA
Drain Source Resistance:
7.0 Ohm
Power Dissipation:
4 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
SMD.22
more info
2SJ125C Image
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Isahaya Electronics - 2SJ125C

Junction Field Effect Transistor (JFET) from Isahaya Electronics
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Description:50 V, -10 mA, P-Channel Junction Field effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
50 V
Continous Drain Current:
-1.0 to -12 mA
Drain Source Resistance:
220 Ohm
Power Dissipation:
0.15 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
SC-59
more info
MMBF4117 Image
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onsemi - MMBF4117

Junction Field Effect Transistor (JFET) from onsemi
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Description:-40 V, 50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-40 V
Power Dissipation:
0.225 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
SOT-23
more info
PMBFJ109 Image
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NXP Semiconductors - PMBFJ109

Junction Field Effect Transistor (JFET) from NXP Semiconductors
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Description:-25 V, 50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-25 V
Drain Source Resistance:
12 Ohm
Power Dissipation:
0.25 W
Package Type:
Surface Mount
Package:
SOT-23
more info
MQ2N5116UB Image
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Microchip Technology - MQ2N5116UB

Junction Field Effect Transistor (JFET) from Microchip Technology
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Description:0.500 W, 30 V , 50 mA, , P-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial, Military
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Continous Drain Current:
-5.0 to -25 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
175 Ohm
Power Dissipation:
0.500 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Surface Mount
Package:
TO-18
more info
UJ3N120035K3S Image
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Qorvo - UJ3N120035K3S

Junction Field Effect Transistor (JFET) from Qorvo
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Description:1200 V Junction Field Effect Transistor for SMPS Applications
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-11.5 V
Continous Drain Current:
63 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
35 milli-ohms
Power Dissipation:
429 W
Gate Charge:
235 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247-3L
more info
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