Junction Field Effect Transistors (JFETs) - Page 4

685 Junction Field Effect Transistors (JFETs) from 16 manufacturers meet your specification.
Description:-30 V, N-Channel Junction Field effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
200 mA
Drain Source Resistance:
7.0 Ohm
Power Dissipation:
4 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
SMD.22
more info
Description:-50 V, 10 mA, N-Channel Junction Field effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-50 V
Continous Drain Current:
20 mA
Drain Source Resistance:
70 Ohm
Power Dissipation:
0.45 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-92S
more info
Description:10 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
50 mA
Power Dissipation:
0.2 W
RoHS Compliant:
Yes
Qualification:
AEC-Q101
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
SC-59
more info
Description:10 mA, Silicon N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channel:
Single
Continous Drain Current:
30 mA
Power Dissipation:
0.25 W
Package Type:
Surface Mount
Package:
SOT-23
more info
Description:0.500 W, 30 V , 50 mA, , P-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial, Military
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Continous Drain Current:
-30 to -90 mA
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
75 Ohm
Power Dissipation:
0.500 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:254 W, SiC, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Threshold Voltage:
-9.3 to -4.7 V
Continous Drain Current:
25 to 34 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
0.055 to 0.142 Ohm
Power Dissipation:
254 W
Gate Charge:
114 nC
RoHS Compliant:
Yes
Operating Temperature:
-55 to 175 Degree C
Package Type:
Through Hole
Package:
TO-247-3L
more info
Description:0.5 W, 30 V, 50 mA, Silicon P-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channel:
Single
Gate Source Voltage:
30 V
Drain Source Resistance:
100 Ohm
Power Dissipation:
0.5 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:1.8 W, -30 V, 50 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial, Military
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-30 V
Continous Drain Current:
20 to 100 mA
Drain Source Resistance:
40 Ohm
Power Dissipation:
1.8 W
Operating Temperature:
-65 to 200 Degree C
Package Type:
Through Hole
Package:
TO-18
more info
Description:0.3 W, 0.7 to 1 V , 50 mA, , N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
0.7 to 1 V
Continous Drain Current:
6 mA
Drain Source Breakdown Voltage:
0.35 to 0.4 V
Drain Source Resistance:
60 Ohm
Power Dissipation:
0.3 W
RoHS Compliant:
Yes
Operating Temperature:
-55 to 150 Degree C
Package Type:
Surface Mount
Package:
DFN
more info
Description:-25 V, 100 mA, N-Channel Junction Field Effect Transistor
Industry:
Industrial, Commercial
Transistor Polarity:
N-Channel
Number of Channel:
Single
Gate Source Voltage:
-25 V
Continous Drain Current:
400 mA
Drain Source Resistance:
7 Ohm
Power Dissipation:
0.3 W
Operating Temperature:
-55 to 150 Degree C
Package Type:
Through Hole
Package:
TO-52
more info

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