MOSFETs - Page 125

18399 MOSFETs from 61 manufacturers meet your specification.
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
13 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
650 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
280 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Military
more info
Description:-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3.6 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
26 to 109 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
Wireless charger, Load switch, Power management
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
39 to 150 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
TSOP-6
Industry:
Commercial, Industrial
more info
Description:-10 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.016 to -0.008 A
Drain Source Breakdown Voltage:
-10 V
Drain Source Resistance:
180000 to 270000 milliohm
Gate Source Voltage:
-10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
8-Pin SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
50 to 105 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Commercial, Industrial
Applications:
Notebook PCs, Cellular and portable phones, On-boa...
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
7000 to 8500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Power Supply, Battery Charger, Ballast, Halogen fr...
more info
Description:-30 to 30 V, 12.2 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.8 to 4.4 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1.15 to 1.4 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
70 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, Ballast
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-100 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2.7 to 5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8L
Industry:
Commercial, Military
more info
Description:1200 V, 10 to 19 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 19 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 225 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
106 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, High Voltage, DC-DC converters, SM...
more info
Description:-80 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 A
Drain Source Breakdown Voltage:
-80 V
Drain Source Resistance:
60 to 72 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info

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