MOSFETs - Page 130

18400 MOSFETs from 61 manufacturers meet your specification.
Description:-40 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-45 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
14 to 25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8L
Industry:
Commercial, Military
more info
Description:1200 V, 5 to 10 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5 to 10 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
350 to 499 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
63 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-3
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:500 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
320 to 380 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
38.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Industrial, Commercial
more info
Description:280 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
280 V
Drain Source Resistance:
660 to 850 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
150 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
more info
Description:60 V, 16 to 22 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 31.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 to 48 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56 Dual
Industry:
Commercial, Industrial
Applications:
BLDC Motor Control, Battery Power Management, DC-D...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3000 to 4000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
Description:100 V, 18 to 100 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
18 to 100 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
5.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK-5x6X
Industry:
Industrial, Commercial
more info
Description:100 V, 6.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.29 ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
23.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMD-0.2
Industry:
Industrial, Commercial, Military
Applications:
Space equipment and systems, Military equipment an...
more info
Description:12 V, 17 to 40.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
17 to 40.5 A
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.00 to 4.50 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
3.20 W
Temperature operating range:
-55 to 150 Degree C
Package:
CSP
Industry:
Industrial, Commercial
more info
Description:500 V, 5.5 A, N-Channel Enhancement Mode HERMETIC MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.85 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-254
Industry:
Industrial, Commercial
more info

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