MOSFETs - Page 145

18400 MOSFETs from 61 manufacturers meet your specification.
Description:-20 to 20 V, 6.9 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
26.8 to 32 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Switching power supplies, Power switches (High Sid...
more info
Description:-25 to 25 V, 31.2 to 64.2 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5700 to 13000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
V-DFN3333-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-10 to 25 V, 188 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 72 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
45 to 90 Milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
520 W
Temperature operating range:
-40 to 150 Degree C
Package:
TO 247-3
Applications:
Solar Inverters, Switch Mode Power Supplies, High ...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1000 to 12000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.125 W
Temperature operating range:
150 Degree C
Package:
SOT-666
Industry:
Industrial, Commercial
more info
Description:400 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.9 A
Drain Source Breakdown Voltage:
400 V
Drain Source Resistance:
550 to 630 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO–257AB
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:-60 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.64 to -0.75 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
750 to 1500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.36 to 0.74 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39, TO-92
Industry:
Commercial, Industrial
Applications:
Motor controls, Converters, Amplifiers, Switches, ...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 to 21.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
59 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060
Industry:
Commercial, Industrial
more info
Description:-60 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
6.5 to 8.5 milliohm
Gate Source Voltage:
-18 to 18 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5060-8L
Industry:
Industrial, Commercial
Applications:
Power management, Portable equipment
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
140 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89-3L
Industry:
Commercial, Industrial
more info
Description:10 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.003 to 0.0048 A
Drain Source Breakdown Voltage:
10 V
Drain Source Resistance:
350000 to 500000 milliohm
Gate Source Voltage:
10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info

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