MOSFETs - Page 153

18400 MOSFETs from 61 manufacturers meet your specification.
Description:-25 to 25 V, 31.2 to 64.2 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-14 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
4100 to 12000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:-8 to 19 V, 38 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 17 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 256 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
97 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO 247-3
Applications:
Renewable energy, High voltage DC/DC converters, S...
more info
Description:30 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2000 to 6000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.1 W
Temperature operating range:
150 Degree C
Package:
SOT-723
Industry:
Industrial, Commercial
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6.7 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
150 to 170 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
14 W
Temperature operating range:
-55 to 150 Degree C
Package:
LCC4
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
33 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
190 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
543 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial
Applications:
PFC and other boost converter, Buck converter, Two...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
90 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
3.7 to 4.8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060
Industry:
Commercial, Industrial
more info
Description:-30 to 30 V, N-Channel, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 17 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
14 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 to 12 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Industrial, Commercial
Applications:
Wireless charger, Load switch, Power management
more info
Description:-50 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.13 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
10000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.225 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
more info
Description:-10 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.002 to -0.0013 A
Drain Source Breakdown Voltage:
-10 V
Drain Source Resistance:
1200000 to 1800000 milliohm
Gate Source Voltage:
-10 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
8-Pin SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
130 to 300 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89
Industry:
Commercial, Industrial
Applications:
Notebook PCs, Cellular and portable phones, On-boa...
more info

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