MOSFETs - Page 207

18400 MOSFETs from 61 manufacturers meet your specification.
Description:55 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
284 to 330 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
0.81 to 2.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
375 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK88
Applications:
Brushless DC motor control, Synchronous rectifier ...
more info
Description:-20 V, 2.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
142 to 300 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
Description:40 V, -300 to 300 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-300 to 300 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.78 to 1.76 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.6 to 166 W
Temperature operating range:
-55 to 175 Degree C
Package:
HSOP8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
Description:-10 to 10 V, 40 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
100 mohms
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
Applications:
AC-DC Merchant Power Supply - Servers & Workstatio...
more info
Description:-25 to 25 V, 25 to 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-19.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
8000 to 18000 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerDI3333-8 (SWP)
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:-8 to 19 V, 19 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.5 to 7.6 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
350 to 525 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO 247-3
Applications:
Renewable energy, High voltage DC/DC converters, S...
more info
Description:-20 V, P-Channel Depletion Mode MOSFET
Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
80 to 230 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
750 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
260 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Military
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
6.5 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333
Industry:
Commercial, Industrial
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
5 to 11 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Industrial, Commercial
Applications:
High current load applications, Load switching, Ha...
more info

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