MOSFETs - Page 239

18400 MOSFETs from 61 manufacturers meet your specification.
Description:150 V, 5.6 to 24 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.6 to 24 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
36 to 48 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
Description:100 V, 41 to 65 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 to 65 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
14 to 20 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
114 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
Description:30 V, 7.6 to 37 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.6 to 37 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
10 to 18 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
26 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK3x3
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Small pow...
more info
Description:-30 V, -200 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-200 mA
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3.0 ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-70
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
Description:60 V, 26 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
8.7 to 18 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
88.2 W
Package:
DPAK
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
Description:-60 to 60 V, N-Channel, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 3 A
Drain Source Breakdown Voltage:
-60 to 60 V
Drain Source Resistance:
90 to 300 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-DSO-8
Industry:
Automotive
Applications:
Automotive, DC-DC, Motor control, Onboard charger
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.05 to 3.5 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous buck, Synchronous rectification, DC/DC...
more info
Description:-30 to 30 V, 190 to 256 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
400 to 550 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
350 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
Description:-150 V, 55 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-36 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.4 to 3.15 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
349 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Applications:
Battery-powered tools, Load switching, Motor contr...
more info

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