MOSFETs - Page 254

18400 MOSFETs from 61 manufacturers meet your specification.
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6 to 12.4 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
19.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
DC/DC power supplies, High current power rails in ...
more info
Description:-30 to 30 V, 10.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
2100 to 2500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
Description:-500 V, 205 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 A
Drain Source Breakdown Voltage:
-500 V
Drain Source Resistance:
230 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
890 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
293 to 325 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.88 to 2.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
375 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK88
Applications:
Brushless DC motor control, Synchronous rectifier ...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4 to 7.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
Description:60 V, -3.5 to 3.5 A, N-Channel, P- Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P- Channel Enhancement...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
69 to 139 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.0 to 13 W
Temperature operating range:
-55 to 150 Degree C
Package:
HSMT8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
Description:-20 to 20 V, 16.2 to 34.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-64 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
7.5 to 13.8 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFNW8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-20 to 20 V, 4 to 7.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5.3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
56 to 115 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SO-8
more info
Description:-10 to 25 V, 40 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 to 18 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 290 Milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO 247-3
Applications:
Solar Inverters, Switch Mode Power Supplies, High ...
more info
Description:-20 V, P-Channel Depletion Mode MOSFET
Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
300 to 560 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info

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