MOSFETs - Page 251

18400 MOSFETs from 61 manufacturers meet your specification.
Description:-20 to 20 V, 9 to 20 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
71 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.1 to 8.8 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
61 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:-25 to 25 V, 5.8 to 11.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
35 to 70 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.38 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
more info
Description:-8 to 19 V, 74 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 73 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
30 to 41 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
240 W
Temperature operating range:
-40 to 150 Degree C
Package:
TO 247-4
Applications:
Solar inverters, EV battery chargers, High voltage...
more info
Description:30 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2000 to 6000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.1 W
Temperature operating range:
125 Degree C
Package:
SOT-883
Industry:
Industrial, Commercial
more info
Description:-350 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.18 A
Drain Source Breakdown Voltage:
-350 V
Drain Source Resistance:
11000 to 15000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Logic-Level Interfaces (Ideal for TTL and CMOS), S...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3 to 5.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
85 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060
Industry:
Commercial, Industrial
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
7.5 to 16 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
21 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Industrial, Commercial
Applications:
High current load applications, Load switching, Ha...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
5.1 to 9.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN
Industry:
Commercial, Industrial
more info
Description:10.6 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.003 to 0.012 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
500000 milliohm
Gate Source Voltage:
10.6 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
SOIC
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.15 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3000 to 5500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23(TO-236)
Industry:
Commercial, Industrial
Applications:
Switching
more info

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