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MOSFETs - Page 319

18461 MOSFETs from 62 manufacturers meet your specification.
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JSMicro Semiconductor - JSM4N65D

MOSFET from JSMicro Semiconductor
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Description:650 V, 2.5 to 4.0 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 to 4.0 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
2.2 to 2.6 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
51 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
High Frequency switching mode power supplies, Acti...
more info
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First Silicon - FTK4906

MOSFET from First Silicon
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Description:40 V, 9.5 to 15 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.5 to 15 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
7.0 to 13.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Notebook, Load Switch, LED applications, Hand-Held...
more info
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Cystech Electronics - MTP2603N6-0-T1-G

MOSFET from Cystech Electronics
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Description:-20 V, -5 to -4 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-5 to -4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
30 to 58 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-26
Industry:
Industrial, Commercial
more info
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PFC Device - PRM012N10CT

MOSFET from PFC Device
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Description:100 V, 36.6 to 58 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36.6 to 58 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12 to 15 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
83.3 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
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uPI Semiconductor - QN3103M3N

MOSFET from uPI Semiconductor
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Description:30 V, 10 to 55 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 to 55 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4.7 to 9.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
27.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK3X3
Industry:
Industrial, Commercial
Applications:
High Frequency Point-of-Load Synchronous Buck Conv...
more info
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Isahaya Electronics - INJ0312AP1

MOSFET from Isahaya Electronics
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Description:-50 V, -2000 mA, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2000 mA
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
350 to 400 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-62
Industry:
Industrial, Commercial
Applications:
switching
more info
TJ60S06M3L Image
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Toshiba - TJ60S06M3L

MOSFET from Toshiba
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Description:-60 V, 156 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-60 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
9.6 to 14.5 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
100 W
Package:
DPAK
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RQK0603CGDQS Image
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Renesas - RQK0603CGDQS

MOSFET from Renesas
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.8 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
205 to 336 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
SP8M51HZG Image
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ROHM Semiconductor - SP8M51HZG

MOSFET from ROHM Semiconductor
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Description:-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-3 to 3 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
120 to 340 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
BSC0923NDI Image
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Infineon Technologies - BSC0923NDI

MOSFET from Infineon Technologies
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
10 to 40 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.1 to 7 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 to 2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
PG-TISON-8
Industry:
Industrial, Commercial
Applications:
Onboard charger, Notebook, Mainboard, DC-DC, VRD/V...
more info
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