MOSFETs - Page 401

18462 MOSFETs from 62 manufacturers meet your specification.
Description:20 V, 7.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
1.6 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
87 to 247 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-363
Industry:
Commercial, Industrial
Applications:
Power Management Switch Applications, High-Speed S...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 40 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
50 W
Temperature operating range:
-55 to 150 Degree C
Package:
LDPAK(S)(1)
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
Description:-30 to 30 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-5 to 5 A
Drain Source Breakdown Voltage:
-30 to 30 V
Drain Source Resistance:
36 to 90 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SOP8
Industry:
Automotive
Applications:
Switching
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
500 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
2.13 to 3.25 milliohm
Gate Source Voltage:
-10 to 20 V
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
80 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1 to 1.85 milliohm
Gate Source Voltage:
-12 to 16 V
Power Dissipation:
65.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous buck converter, High power density DC/...
more info
Description:-20 to 20 V, 13 to 26 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
7.1 to 11 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
73 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
Description:-30 to 30 V, 34 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.2 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
1100 to 1350 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
Description:-150 V, 48 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
240 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.7 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
54 to 110 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 ºC
Package:
TSOT26
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:500 V, 0.013 A, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.013 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
850000 to 1000000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Solid state relays, Normally-on switches, Converte...
more info

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