MOSFETs - Page 399

18462 MOSFETs from 62 manufacturers meet your specification.
Description:-50 V, 53 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-48 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
30 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-17.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
4200 to 17000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
41 W
Temperature operating range:
-55 to 150 ºC
Package:
PowerDI3333-8
Applications:
Load Switch, Power Management Functions
more info
Description:-200 to 200 V, -2 to 2 A, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Technology:
Silicon
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-200 to 200 V
Drain Source Resistance:
10000 to 15000 milliohm
Temperature operating range:
-55 to 150 Degree C
Package:
VDFN
Industry:
Commercial, Industrial
Applications:
High-Voltage Pulser, Amplifiers, Buffers, Piezoele...
more info
Description:30 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1 to -0.6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
430 to 1610 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.35 to 6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT883
Applications:
Relay driver, High-speed line driver, High-side lo...
more info
Description:30 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2000 to 6000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.1 W
Temperature operating range:
125 Degree C
Package:
SOT-883
Industry:
Industrial, Commercial
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
3000 to 4000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Signal processing, Battery management Drivers, Log...
more info
Description:30 V, 7.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
55 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
6.5 to 12.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
Applications:
Vcore / MB, POL Application, SMPS 2nd SR
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
3.3 to 5.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333
Industry:
Commercial, Industrial
more info
Description:850 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2 A
Drain Source Breakdown Voltage:
850 V
Drain Source Resistance:
6300 milliohm
Gate Source Voltage:
30 V
Temperature operating range:
-55 to 150 Degree C
Industry:
Industrial, Commercial, Military
Applications:
LED lighting, Switch-mode power supplies, Power fa...
more info
Description:-30 to 30 V, 23.9 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.7 to 9.0 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
0.65 to 0.80 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
48 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, High Current, High Speed Switch...
more info

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