MOSFETs - Page 41

18399 MOSFETs from 61 manufacturers meet your specification.
Description:-30 to 30 V, 11.5 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.2 to 5.0 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1.15 to 1.4 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
27 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, Ballast
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-35 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
12 to 23 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
30 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333-8L
Industry:
Automotive
more info
Description:1200 V, 16 to 31 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 31 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 106 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
137 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, Moter drives, EV Charging, High Vo...
more info
Description:120 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
120 V
Drain Source Resistance:
8 to 10 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
120 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification in SMPS or LED Driver, U...
more info
Description:900 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
2800 to 3600 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
79 W
Temperature operating range:
-55 to 150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10.1 to 15.9 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
94 to 190 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
61 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220 Fullpak
Industry:
Commercial, Industrial
Applications:
Power Factor Correction, Server Power Supplies, Te...
more info
Description:1200, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
800 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
1.7 to 2.4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3120 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
AC Motor control, Motion servo control, Power Supp...
more info
Description:700 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
700 V
Drain Source Resistance:
870 to 1400 milliohm
Gate Source Voltage:
30 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Industrial, Commercial
Applications:
Power Factor Correction, Alternative energy invert...
more info
Description:60 V, 5.5 to 15 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
15 to 20 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251 (I-PAK)
Industry:
Commercial, Industrial
Applications:
SMPS Synchronous Rectificatio, Networking DC-DC Po...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
24 to 40 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info

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