MOSFETs - Page 39

18399 MOSFETs from 61 manufacturers meet your specification.
Description:1200 V SiC MOSFET for Electric Vehicle Traction Inverters
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Continous Drain Current:
379 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
3.45 milliohm
Gate Source Voltage:
-5 to 18 V
Power Dissipation:
704 W
Temperature operating range:
-40 to 175 Degree C
Package:
ACEPACK DRIVE
Industry:
Automotive
Applications:
Main inverter (electric traction)
more info
Description:-50 V, 200 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-140 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
9 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
298 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263 AA
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:30 V N-Channel Trench Power MOSFET for Fast Switching Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
40 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.48 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT8026
Industry:
Industrial
Applications:
Battery switch, High-speed line driver, Low-side l...
more info
Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
68 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
33 to 45 milliohm
Gate Source Voltage:
-8 to 18 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Industrial
Applications:
Renewable Industrial, EV Charger, UPS, Solar Inver...
more info
Description:-30 V, 45 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11 to 11 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
9.7 to 25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
more info
Description:100 V, -2.5 to 2.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
154 to 295 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.4 to 2.0 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP8
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives
more info
Description:-20 to 20 V, 45 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
109 to 154 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.2 to 5.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
133 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification (SR) in DC-DC and AC-DC,...
more info
Description:-20 to 20 V, 0.6 to 1.2 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.3 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
2400 to 4000 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.54 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Load Switch, Portable Applications, Power Manageme...
more info
Description:1200 V, 134 A, MOSFET
Technology:
SiC
Continous Drain Current:
134 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
17 milli-ohm
Temperature operating range:
175 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
Automotive Drivetrain, Motor Drives, Solid State C...
more info
Description:30 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
113 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.3 to 2.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
42 W
Temperature operating range:
150 Degree C
Package:
HSO8-F4-B
Industry:
Industrial, Commercial
more info

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