MOSFETs - Page 425

18462 MOSFETs from 62 manufacturers meet your specification.
Description:1100 V, 310 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
24 A
Drain Source Breakdown Voltage:
1100 V
Drain Source Resistance:
290 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
500 W
Temperature operating range:
-55 to 150 Degree C
Package:
SMPD
Industry:
Commercial, Industrial
Applications:
Switch-Mode and Resonant-Mode Power Supplies, Puls...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
36 to 90 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.53 W
Temperature operating range:
-55 to 150 ºC
Package:
X2-DFN2015-3
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:500 V, 0.03 A, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.03 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
850000 to 1000000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.74 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92
Industry:
Commercial, Industrial
Applications:
Solid state relays, Normally-on switches, Converte...
more info
Description:30 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.41 to -0.26 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
1020 to 5100 Milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.31 to 1.67 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT883
Applications:
Relay driver, High-speed line driver, High-side lo...
more info
Description:8 V, Dual, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
55 to 225 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.32 to 0.60 W
Package:
CSP
more info
Description:60 V, 36 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
51 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
11 to 13 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 to 83 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
Applications:
BLDC Motor Control, Battery Power Management, DC-D...
more info
Description:-60 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
35 to 60 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
more info
Description:30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
0.45 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1100 to 3300 milliohm
Gate Source Voltage:
8 V
Temperature operating range:
-65 to 150 Degree C
Industry:
Industrial, Commercial, Military
more info
Description:-30 to 30 V, 29.3 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.0 to 10.0 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
0.85 to 1.0 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
47.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, High Current, High Speed Switch...
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.75 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
850 to 6000 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN1006-3L
Industry:
Commercial, Military
more info

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