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MOSFETs - Page 445

18465 MOSFETs from 62 manufacturers meet your specification.
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First Silicon - FTK8982B

MOSFET from First Silicon
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Description:-20 to 20 V, 9.6 to 12 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9.6 to 12 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.7 to 12.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Industrial, Commercial
Applications:
Networking, Load Switch, LED applications
more info
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Cystech Electronics - MTB016B03V8-0-T6-G

MOSFET from Cystech Electronics
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Description:-30 V, -22 to -6 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-22 to -6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
18 to 55 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3×3
Industry:
Industrial, Commercial
more info
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PFC Device - PRM5R2N03D

MOSFET from PFC Device
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Description:30 V, 45 to 79 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45 to 79 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4.4 to 9.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
TK35S04K3L Image
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Toshiba - TK35S04K3L

MOSFET from Toshiba
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Description:40 V, 28 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
8.2 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
58 W
Package:
DPAK
Industry:
Commercial, Industrial, Automotive
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
RQK0607AQDQS Image
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Renesas - RQK0607AQDQS

MOSFET from Renesas
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
210 to 350 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RSR020P05HZG Image
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ROHM Semiconductor - RSR020P05HZG

MOSFET from ROHM Semiconductor
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Description:-45 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2 to 2 A
Drain Source Breakdown Voltage:
-45 V
Drain Source Resistance:
130 to 280 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-346T
Industry:
Commercial, Automotive
Applications:
Switching
more info
FF11MR12W1M1_B70 Image
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Infineon Technologies - FF11MR12W1M1_B70

MOSFET from Infineon Technologies
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Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
SiRA84BDP-T1-GE3 Image
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Vishay - SiRA84BDP-T1-GE3

MOSFET from Vishay
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.3 to 7.1 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
36 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
High power density DC/DC, Synchronous rectificatio...
more info
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onsemi - RFD16N05LSM9A

MOSFET from onsemi
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Description:-10 to 10 V, 80 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
56 mohms
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
60 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252AA
Industry:
Commercial, Industrial
Applications:
AC-DC Merchant Power Supply - Servers & Workstatio...
more info
STP80N240K6 Image
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STMicroelectronics - STP80N240K6

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 25.9 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
197 to 220 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
140 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Flyback converter, Adapters for tablets, notebook ...
more info
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