MOSFETs - Page 443

18465 MOSFETs from 62 manufacturers meet your specification.
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
14.2 to 22.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
24 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Primary side switch, Synchronous rectification, DC...
more info
Description:-20 to 20 V, 19 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
10.6 to 19.8 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
WDFN-8
Industry:
Commercial, Industrial
Applications:
Load Switches, Synchronous Rectifier, DC Motor Con...
more info
Description:-20 to 20 V, 34 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
11.5 to 19 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
DC to 175 Degree C
Package:
PowerFLAT 5x6
Applications:
Switching applications
more info
Description:-100 V, 39 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
120 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.33 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
500 to 3000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.36 W
Temperature operating range:
-55 to 150 ºC
Package:
X2-DFN0806-3
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:500 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
170 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
370 W
Temperature operating range:
-55 to 150 Degree C
Package:
D3PAK
Industry:
Commercial, Military
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.3 to -1.8 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
67 to 125 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.48 to 6.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Relay driver, High-speed line driver, High-side lo...
more info
Description:8 V, Dual, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.1 to 4.5 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.54 to 3.8 W
Package:
CSP
more info
Description:40 V, 19 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
10 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1 to 56 W
Temperature operating range:
-55 to 175 Degree C
Package:
PDFN56
Industry:
Commercial, Industrial
Applications:
BLDC Motor Control, Battery Power Management, DC-D...
more info

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