MOSFETs - Page 440

18462 MOSFETs from 62 manufacturers meet your specification.
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
4 to 7.6 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
11 to 16 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
50 W
Temperature operating range:
150 Degree C
Package:
TO-263 (D2PAK)
Industry:
Commercial, Automotive
Applications:
Switching
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.3 to 16.5 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
130 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
2.33 to 3.55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Synchronous rectification, Primary side switch, DC...
more info
Description:-20 to 20 V, 19 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
42 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
10.6 to 19.8 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
45 W
Temperature operating range:
-55 to 150 Degree C
Package:
WDFN-8
Industry:
Commercial, Industrial
Applications:
Load Switches, Synchronous Rectifier, DC Motor Con...
more info
Description:-20 to 20 V, 6.4 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
130 to 160 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.6 W
Temperature operating range:
-55 to 175 Degree C
Package:
SOT-223
Applications:
Switching applications
more info
Description:-150 V, 175 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-44 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
65 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
298 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3P
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
41 to 113 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 ºC
Package:
SOT23
more info
Description:600 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
100 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
520 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial, Military
more info
Description:30 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 to -1.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
74 to 150 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.51 to 6.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Relay driver, High-speed line driver, High-side lo...
more info

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