MOSFETs - Page 461

18465 MOSFETs from 62 manufacturers meet your specification.
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
21 to 40 milliohm
Gate Source Voltage:
-2.5 to 16 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK(S)
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 to 4.5 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
25 to 53 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.25 W
Temperature operating range:
150 Degree C
Package:
SOT-457T
Industry:
Commercial, Automotive
Applications:
Switching
more info
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
50 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
22.5 to 33 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
Description:240 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.16 to 0.2 A
Drain Source Breakdown Voltage:
240 V
Drain Source Resistance:
2200 to 6000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.23 to 0.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-236 (SOT-23)
Industry:
Industrial, Commercial
Applications:
High-Voltage Drivers Relays, Solenoids, Lamps, Ham...
more info
Description:-20 to 20 V, 55 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
35 A
Drain Source Breakdown Voltage:
55 V
Drain Source Resistance:
28 to 34 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
93 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Industrial, Commercial
more info
Description:-30 to 30 V, 30 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
410 to 500 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
Description:-150 V, 36 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-150 V
Drain Source Resistance:
350 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
64 to 600 milliohm
Gate Source Voltage:
-12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 ºC
Package:
X4-DSN1006-3
Applications:
Battery Management, Load Switch, Battery Protectio...
more info
Description:600 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
110 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
1040 W
Temperature operating range:
-55 to 150 Degree C
Package:
T-MAX
Industry:
Commercial
Applications:
PFC and other boost converter, Buck converter, Two...
more info
Description:110 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 23 A
Drain Source Breakdown Voltage:
110 V
Drain Source Resistance:
49 to 189 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
DC-to-DC convertors, Switched-mode power supplies
more info

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