MOSFETs - Page 469

18465 MOSFETs from 62 manufacturers meet your specification.
Description:1200 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
45 to 66 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial
Applications:
High Frequency Switching application, DC/DC conver...
more info
Description:240 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.16 to 0.2 A
Drain Source Breakdown Voltage:
240 V
Drain Source Resistance:
2200 to 6000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.23 to 0.36 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-236 (SOT-23)
Industry:
Industrial, Commercial
Applications:
High-Voltage Drivers Relays, Solenoids, Lamps, Ham...
more info
Description:-20 to 20 V, 100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
57 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
12 to 15 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification for ATX / Server / Telec...
more info
Description:-20 to 20 V, 34 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
46 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
12.5 to 20 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
70 W
Temperature operating range:
DC to 175 Degree C
Package:
DPAK
Applications:
Switching applications
more info
Description:-50 V, 46 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-32 A
Drain Source Breakdown Voltage:
-50 V
Drain Source Resistance:
39 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.4 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
64 to 600 milliohm
Gate Source Voltage:
-12 V
Power Dissipation:
1.4 W
Temperature operating range:
-55 to 150 ºC
Package:
X4-DSN1006-3
Applications:
Battery Management, Load Switch, Battery Protectio...
more info
Description:500 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
51 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
75 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
460 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-227
Industry:
Commercial, Military
more info
Description:200 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14 to 20 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
120 to 377 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Industry:
Commercial, Industrial
Applications:
DC-to-DC converters, General purpose switching
more info
Description:8 V, Dual, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
1.5 to 6.1 milliohm
Gate Source Voltage:
8 V
Power Dissipation:
0.45 to 2.1 W
Package:
CSP
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
81 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.5 to 4.5 milliohm
Gate Source Voltage:
-16 to 16 V
Power Dissipation:
38 to 115 W
Temperature operating range:
-55 to 175 Degree C
Industry:
Commercial, Industrial
Applications:
DC-DC Converters, Solenoid and Motor Drivers, Load...
more info

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