MOSFETs - Page 473

18465 MOSFETs from 62 manufacturers meet your specification.
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
1950 to 3500 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
Description:30 V, 14.2 to 37.8 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
14.2 to 37.8 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
9.5 to 13.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
22.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
PMPAK-5x6
Industry:
Industrial, Commercial
more info
Description:100 V, 64 to 83 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
64 to 83 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
7.1 to 8.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN5x6-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
Description:40 V, 162 to 230 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
162 to 230 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
2.3 to 4.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
285 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
Description:-20 to 20 V, 4.5 to 9 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
4.5 to 9 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
0.20 to 0.45 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
Applications:
Lighting, Uniterrupted Power Supply, Switch Mode P...
more info
Description:30 V, 0.63 to 0.79 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.63 to 0.79 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.5 to 2 Ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.78 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-723
Industry:
Industrial, Commercial
more info
Description:30 V, 60 to 127 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 to 127 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
3.3 to 4.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
96 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN-5x6
Industry:
Industrial, Commercial
Applications:
Charger Adapter, Power Tools, LED Lighting
more info
Description:60 V, 9.3 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
28 to 69 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.4 W
Package:
SOT-23
Applications:
Power Management Switches, DC-DC Converters
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
30 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6.5 to 8 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
55 W
Temperature operating range:
-55 to 150 Degree C
Package:
WPAK(3F)
Industry:
Commercial, Industrial
Applications:
High Speed Power Switching
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-3.5 to 3.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
31 to 80 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1 W
Temperature operating range:
150 Degree C
Package:
SOT-363T
Industry:
Commercial, Automotive
Applications:
DC/DC converters
more info

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