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MOSFETs - Page 476

18465 MOSFETs from 62 manufacturers meet your specification.
SSM6K404TU Image
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Toshiba - SSM6K404TU

MOSFET from Toshiba
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Description:20 V, 5.9 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
43 to 147 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.5 W
Package:
SOT-363
Applications:
High-Speed Switching Applications, Power Managemen...
more info
RQK2501YGDQA Image
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Renesas - RQK2501YGDQA

MOSFET from Renesas
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Description:250 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.4 A
Drain Source Breakdown Voltage:
250 V
Drain Source Resistance:
4000 to 5600 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
RUF025N02FRA Image
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ROHM Semiconductor - RUF025N02FRA

MOSFET from ROHM Semiconductor
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Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-2.5 to 2.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
39 to 160 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.8 W
Temperature operating range:
150 Degree C
Package:
SOT-323T
Industry:
Commercial, Automotive
Applications:
Switching
more info
IRHQ567110 Image
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Infineon Technologies - IRHQ567110

MOSFET from Infineon Technologies
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Description:-100 to 100 V, N-Channel Enhancement Mode, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Quad
Continous Drain Current:
-2.8 to 4.6 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
270 to 1200 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
12 W
Temperature operating range:
-55 to 150 Degree C
Package:
28-pin LCC
Industry:
Space, Military
more info
SiZ998BDT-T1-GE3 Image
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Vishay - SiZ998BDT-T1-GE3

MOSFET from Vishay
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Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
19 to 94.6 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.8 to 7.12 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
2.4 to 32.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAIR 6 x 5
Industry:
Industrial, Commercial
Applications:
CPU core power, Computer / server peripherals, POL...
more info
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onsemi - FQT4N20L

MOSFET from onsemi
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Description:-20 to 20 V, 200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.85 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
1100 to 1400 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-223
Industry:
Industrial, Commercial
more info
STU8N80K5 Image
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STMicroelectronics - STU8N80K5

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 16.5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
800 to 950 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
IPAK
Applications:
Switching applications
more info
IXTP150N15X4 Image
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Littelfuse - IXTP150N15X4

MOSFET from Littelfuse
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Description:150 V N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
150 V
Drain Source Resistance:
7.2 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
480 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
DMP2010UFG Image
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Diodes Incorporated - DMP2010UFG

MOSFET from Diodes Incorporated
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Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-12.7 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
9500 to 12500 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
2.3 W
Temperature operating range:
-55 to 150 ºC
Package:
PowerDI3333-8
Applications:
Load Switch, Power Management Functions
more info
APT50M65B2LL Image
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Microchip Technology - APT50M65B2LL

MOSFET from Microchip Technology
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Description:500 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
67 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
65 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
694 W
Temperature operating range:
-55 to 150 Degree C
Package:
T-MAX
Industry:
Commercial, Military
more info
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