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MOSFETs - Page 496

18465 MOSFETs from 62 manufacturers meet your specification.
MDWC0151ERH Image
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Magnachip Semiconductor - MDWC0151ERH

MOSFET from Magnachip Semiconductor
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Description:24 V Dual N-Channel Trench Power MOSFET for Battery Protection Applications
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
22 A
Drain Source Breakdown Voltage:
24 V
Drain Source Resistance:
2.8 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
2.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
WLCSP
Industry:
Industrial
Applications:
Portable Battery Protection
more info
PJA3433-AU Image
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PANJIT Semiconductor - PJA3433-AU

MOSFET from PANJIT Semiconductor
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Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-1.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
293 to 970 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Military
more info
RMD7N20ED2 Image
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Rectron Semiconductor - RMD7N20ED2

MOSFET from Rectron Semiconductor
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Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
6.8 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
13 to 22 milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN2X2
Industry:
Commercial, Industrial
Applications:
Interfacing Switching, Load Switching, Power manag...
more info
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Yangjie Electronic Technology - YJB110G10B

MOSFET from Yangjie Electronic Technology
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Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
4.5 to 5.2 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
260 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-263
Industry:
Industrial, Commercial
Applications:
Power switching application, Hard switched and hig...
more info
03N06L Image
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Goford Semiconductor - 03N06L

MOSFET from Goford Semiconductor
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Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
72 to 120 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.7 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-3L
Industry:
Industrial, Commercial
Applications:
Power switch, DC/DC converters
more info
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Advanced Power Electronics Corp - AP3N2R1H

MOSFET from Advanced Power Electronics Corp
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Description:30 V, 75 to 183 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
75 to 183 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.1 to 3.3 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
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Hunan Jingxin Microelectronics - ESN4486

MOSFET from Hunan Jingxin Microelectronics
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Description:100 V, 8 to 10 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
8 to 10 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
97.0 to 142.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20 W
Temperature operating range:
-55 to 150 Degree C
Package:
PDFN3x3-8L
Industry:
Industrial, Commercial
Applications:
PWM applications, Load switch, Power management in...
more info
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JSMicro Semiconductor - JSM1404

MOSFET from JSMicro Semiconductor
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Description:40 V, 162 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
162 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.0 to 5.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
171 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Switch Mode Power Supply (SMPS), Uniterruptible Po...
more info
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First Silicon - FTK2309L

MOSFET from First Silicon
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Description:-20 V, -3.7 to -5.8 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.7 to -5.8 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
28 to 65 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
1.56 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23-6L
Industry:
Industrial, Commercial
Applications:
Notebook, Load Switch, Networking
more info
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Cystech Electronics - MTB2D8N03RH8-0-T6-G

MOSFET from Cystech Electronics
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Description:30 V, 17 to 100 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17 to 100 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.7 to 5.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
66 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5×6
Industry:
Industrial, Commercial
more info
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