MOSFETs - Page 526

18465 MOSFETs from 62 manufacturers meet your specification.
Description:-20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
88 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
2.91 to 3.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
46.3 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220 FULLPACK, 3-LEAD (ULTRA NARROW LEAD)
Industry:
Industrial, Commercial
Applications:
Synchronous Rectification for ATX / Server / Telec...
more info
Description:-30 to 30 V, 22 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
400 to 445 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
130 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
Description:200 V N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
36 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Applications:
Switch-Mode and Resonant-Mode Power Supplies, DC-D...
more info
Description:20 V, P-Channel MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Dual
Continous Drain Current:
-0.33 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
1200 to 5000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.31 W
Temperature operating range:
-55 to 150 ºC
Package:
X2-DFN0806-6
Applications:
General Purpose Interfacing Switch, Power Manageme...
more info
Description:500 V N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
56 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
100 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
780 W
Temperature operating range:
-55 to 150 Degree C
Package:
T-MAX
Industry:
Commercial
Applications:
PFC and other boost converter, Buck converter, Two...
more info
Description:-20 to 20 V, 46 to 69 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-30 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
26 to 69 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56
Industry:
Commercial, Industrial
Applications:
Reverse battery protection, Power management, High...
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-36 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
13 to 30 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.5 to 27.8 W
Temperature operating range:
-55 to 150 Degree C
Industry:
Commercial, Industrial
Applications:
DC-DC Converters, Battery Power Management, Oring ...
more info
Description:-40 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-45 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
15 to 23 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
65 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Commercial, Industrial
more info
Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.5 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
38 to 88 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
1.25 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Military
more info
Description:200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
200 V
Drain Source Resistance:
16 to 21 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Synchronous Rectification in SMPS, Hard Switching ...
more info

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.