MOSFETs - Page 56

18399 MOSFETs from 61 manufacturers meet your specification.
Description:-30 to 30 V, 12.2 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.2 to 5.0 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
1.15 to 1.4 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
93 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, Ballast
more info
Description:-60 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-11.5 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
87 to 130 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
26 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8L
Industry:
Commercial, Military
more info
Description:1700 V, 9 to 18 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 to 18 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
160 to 321 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
145 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-263-7
Industry:
Commercial, Industrial, Automotive
Applications:
Solar Inverter, EV fast charging, SMPS, UPS, Auxil...
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.4 to 4 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
2000 to 2500 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
100 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
560 to 670 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
90 W
Temperature operating range:
150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
Description:650 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
21.3 to 33.6 A
Drain Source Breakdown Voltage:
650 V
Drain Source Resistance:
94 to 190 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
272 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
Power Factor Correction, Server Power Supplies, Te...
more info
Description:800 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
6 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
800 to 950 milliohm
Gate Source Voltage:
30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Industry:
Industrial, Commercial
Applications:
Power Factor Correction, Alternative energy invert...
more info
Description:20 V, 7.8 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3.9 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
34 to 95 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Commercial, Industrial
Applications:
Load switch, Backlights
more info
Description:65 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
110 A
Drain Source Breakdown Voltage:
65 V
Drain Source Resistance:
2.5 to 4.5 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
71 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK
Industry:
Commercial, Industrial
Applications:
DC/DC converter, Power supplies, DC drives, Synchr...
more info
Description:100 V, 5.1 to 8.1 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.1 to 8.1 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
135 to 145 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251S
Industry:
Industrial, Commercial
more info

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