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MOSFETs - Page 92

18399 MOSFETs from 61 manufacturers meet your specification.
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uPI Semiconductor - QM3098M6

MOSFET from uPI Semiconductor
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Description:30 V, 16 to 128 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 128 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.4 to 4 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
78 W
Temperature operating range:
-55 to 150 Degree C
Package:
PRPAK-5x6
Industry:
Industrial, Commercial
more info
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Isahaya Electronics - INK0512CC1

MOSFET from Isahaya Electronics
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Description:30 V, 5.0 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.0 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
27 to 47 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.9 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
High speed switching, Analog switching
more info
SSM14N956L Image
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Toshiba - SSM14N956L

MOSFET from Toshiba
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Description:12 V Dual N-Channel Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Drain Source Breakdown Voltage:
12 V
Drain Source Resistance:
3.2 milli-ohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
1.33 W
Temperature operating range:
-55 to 150 Degree C
Package:
TCSPED-302701
Applications:
Battery Protection Circuits
more info
IQE050N08NM5CG Image
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Infineon Technologies - IQE050N08NM5CG

MOSFET from Infineon Technologies
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Description:80 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
16 to 101 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
4.3 to 8.5 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 to 100 W
Temperature operating range:
-55 to 175 Degree C
Package:
PG-TTFN-9-1
Industry:
Commercial, Industrial
Applications:
Drives, Telecom, SMPS, Server, Oring, Battery mana...
more info
SiR804DP-T1-GE3 Image
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Vishay - SiR804DP-T1-GE3

MOSFET from Vishay
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Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
60 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
5.9 to 10.3 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
104 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
Fixed telecom, DC/DC converter, Primary side switc...
more info
STS7P4LLF6 Image
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STMicroelectronics - STS7P4LLF6

MOSFET from STMicroelectronics
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Description:-20 to 20 V, 22 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
17.5 to 29 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.7 W
Temperature operating range:
DC to 150 Degree C
Package:
SO-8
Applications:
Switching applications
more info
IXTT90P10P Image
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Littelfuse - IXTT90P10P

MOSFET from Littelfuse
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Description:-100 V, 120 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-90 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
25 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
462 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
PSMN2R4-30MLD Image
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Nexperia - PSMN2R4-30MLD

MOSFET from Nexperia
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Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
70 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2 to 5.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
91 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK33
Applications:
On-board DC-DC solutions for server and telecommun...
more info
AOD464 Image
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Alpha & Omega Semiconductor - AOD464

MOSFET from Alpha & Omega Semiconductor
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Description:105 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
40 A
Drain Source Breakdown Voltage:
105 V
Drain Source Resistance:
21.5 to 40.0 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
1.5 to 100 W
Package:
DPAK (TO-252)
Industry:
Industrial
Applications:
load switches, synchronous rectification, general ...
more info
RJE0616JSP Image
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Renesas - RJE0616JSP

MOSFET from Renesas
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Description:-60 V, , P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
77 to 105 milliohm
Gate Source Voltage:
-16 to 2.5 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Automotive
Applications:
Power Switching
more info
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