MOSFETs - Page 88

18399 MOSFETs from 61 manufacturers meet your specification.
Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
100 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.7 to 3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
211 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-220AB
Applications:
DC-to-DC converters, Load switiching, Motor contro...
more info
Description:600 V N-Channel Enhancement MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Continous Drain Current:
20 to 35 A
Drain Source Breakdown Voltage:
600 to 700 V
Drain Source Resistance:
86 to 110 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
357 W
Temperature operating range:
-55 to 150 degree C
Package:
DFN8x8-4L
Industry:
Industrial
Applications:
PFC and PWM stages of Server, Telecom, Industrial,...
more info
Description:-20 V, 2.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.1 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
142 to 300 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
0.8 W
Temperature operating range:
-55 to 150 Degree C
Package:
MPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
Description:-60 V, -80 to 80 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
8.2 to 11.9 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
142 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
Description:-20 to 20 V, 10.4 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
47 to 66 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
4.1 to 4.7 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
38 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Commercial, Industrial
Applications:
Motor Drive, Battery Protection, Oring
more info
Description:-20 to 20 V, 5.2 to 11 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
65 to 99 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.08 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Backlighting, Power Management Functions, DC-DC Co...
more info
Description:SiC Half-Bridge MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
2300 V
Drain Source Resistance:
5 to 11.9 milli-ohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
710 W
Temperature operating range:
-40 to 150 Degree C
Industry:
Industrial, Commercial
Applications:
DC Fast Chargers, Energy Storage Systems, High-Eff...
more info
Description:-40 V, P-Channel Depletion Mode MOSFET
Types of MOSFET:
P-Channel Depletion Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-7 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
19 to 45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2 W
Temperature operating range:
150 Degree C
Package:
SO8-F1-B
Industry:
Industrial, Commercial
more info
Description:-10 to 25 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61 to 83 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
28 to 77 milli-ohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
564 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-247-4L
Industry:
Industrial, Commercial
Applications:
Solar Inverters, Switch mode power supplies, UPS, ...
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7.2 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
180 to 207 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
20.833 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Designed For Switching, Power Supply, Motor Contro...
more info

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