The EPC2221 from Efficient Power Conversion is an Enhancement Mode GaN Power Transistor suitable for multi-channel lidar applications. It has a drain-source voltage of 100 V with a drain-source resistance of up to 58 milliohms and a gate threshold voltage of up to 2.5 V. This dual-mode GaN transistor has a continuous drain current of 5 A and a pulsed drain current of 20 A. It has low inductance and capacitance that allows fast switching and narrow pulse widths for high resolution and high efficiency. This AEC-Q101 qualified transistor has exceptionally high electron mobility and a low-temperature coefficient resulting in a very low drain to source resistance. The lateral structure of this transistor provides a very low gate charge, and zero reverse recovery charge. It is available in a passivated die package that measures 1.35 x 1.35 mm and is ideal for automotive Lidar/ToF, high-frequency DC-DC, and wireless power applications.