The EPC7019 from Efficient Power Conversion is a Radiation Hardened GaN Power Transistor that is specifically designed for critical applications in high reliability or commercial satellite space environments. This enhancement-mode transistor has a drain-source voltage of over 40 V and a gate threshold voltage of 1.4 V. It has a pulsed drain current of 530 A and a drain-source resistance of 1.5 milli-ohms. The transistor offers superior reliability performance in a space environment because there are no minority carriers for a single event, and as a wideband semiconductor, there is less displacement for protons and neutrons. It has exceptionally high electron mobility and a low-temperature coefficient resulting in very low drain-source resistance. The transistor provides a low gate charge and supports a faster switching speed. 

The EPC7019 is available as a passivated die that measures 6.05 x 2.3 mm and is ideal for commercial satellite EPS & avionics, deep space probes, high-frequency radiation-hardened DC-DC conversion, and radiation-hardened motor drives applications.