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CDA04N30X1S

GaN Power Transistor by EPC Space (47 more products)
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The CDA04N30X1S from EPC Space is a GaN Power Transistor with Gate Threshold Voltage 0.8 to 2.5 V, Drain Source Voltage 40 V, Drain Source Resistance 3.2 to 4 milli-ohm, Continous Drain Current 30 A, Pulsed Drain Current 100 A. Tags: Die. More details for CDA04N30X1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    CDA04N30X1S
  • Manufacturer
    EPC Space
  • Description
    40 V, 30 A, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Space, Military, Commercial, Industrial
  • Gate Threshold Voltage
    0.8 to 2.5 V
  • Drain Source Voltage
    40 V
  • Drain Source Resistance
    3.2 to 4 milli-ohm
  • Continous Drain Current
    30 A
  • Pulsed Drain Current
    100 A
  • Total Charge
    11.4 nC
  • Input Capacitance
    1300 pF
  • Output Capacitance
    800 pF
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Die
  • Applications
    Satellite EPS & Avionics, Deep Space Probes, High Speed Rad Hard DC-DC Conversion, Rad Hard Motor Controllers
  • Dimensions
    4.8 x 2.2 mm

Technical Documents
View details on the manufacturer's website
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