The EPC7018G from EPC Space is a Rad-Hard GaN Power Transistor that has been specifically designed for critical applications in high reliability or commercial satellite space environments. It has a drain-to-source voltage of over 100 V, a gate threshold voltage of 1.2 V, and a drain-source resistance of 5.2 mΩ. This GaN transistor has a continuous drain current of up to 95 A and a pulsed drain current of less than 345 A. It has exceptionally high electron mobility and low-temperature coefficient that results in a very low drain-source on-resistance.

The EPC7018G consists of a lateral structure that provides a very low gate charge and offers an extremely fast switching time. This transistor is available in a die that measures 8 x 5.6 x 1.6 mm and is ideal for satellite and avionics, deep space probes, high-speed rad-hard DC-DC conversion, nuclear facilities, and rad-hard motor controller applications.