The JANSH2N7667UFBC from EPC Space is a Radiation Hardened GaN Transistor that has been designed for critical applications in Space and other high-reliability environments. This transistor has a drain-source voltage of up to 40 V, a gate threshold voltage of less than 1 V, and a drain-source on-resistance of 9 milli-ohms. It has a continuous drain current of up to 30 A and a pulsed drain current of less than 120 A. This GaN transistor has high electron mobility and a low temperature coefficient resulting in very low drain-source resistance values. Its lateral die structure provides a very low gate charge (QG) and extremely fast switching times. 

This GaN transistor can operate under conditions of up to 100% of its rated breakdown voltage while maintaining immunity against the Single Event Effect (SEE) at a linear energy transfer (LET) threshold of 83.7 MeV/mg/cm². It is immune to both LDR (Low Dose Rate) and HDR (High Dose Rate) TID (Total Ionizing Dose) effects. This lightweight GaN transistor is capable of enduring up to 4 x 1015 neutrons/cm² while maintaining its operational specifications. It is available in a compact hermetic surface-mount package that measures 5.715 x 3.937 x 2.235 mm and is ideal for satellite and avionics, deep space probes, high-speed rad-hard DC-DC conversion, and rad-hard motor controller applications.