JANSH2N7673UFCC

GaN Power Transistor by EPC Space (46 more products)

Note : Your request will be directed to EPC Space.

The JANSH2N7673UFCC from EPC Space is a GaN Power Transistor with Drain Source Voltage 300 V, Drain Source Resistance 350 milli-ohm, Continous Drain Current 2.3 to 4 A, Total Charge 2.6 C. Tags: Surface Mount. More details for JANSH2N7673UFCC can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    JANSH2N7673UFCC
  • Manufacturer
    EPC Space
  • Description
    300 V, 2.3 to 4 A, GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Drain Source Voltage
    300 V
  • Drain Source Resistance
    350 milli-ohm
  • Continous Drain Current
    2.3 to 4 A
  • Total Charge
    2.6 C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    FSMD-C

Latest GaN Transistors

View more products