1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. GaN Transistors
  5. GaNPower International
  6. GPI65030DFN

GPI65030DFN

GaN Power Transistor by GaNPower International (30 more products)
Download Datasheet Request Quote

Note : Your request will be directed to GaNPower International.

The GPI65030DFN from GaNPower International is a GaN Power Transistor with Gate Threshold Voltage 0.9 to 2.9 V, Drain Source Voltage 650 V, Drain Source Resistance 29 to 70 milli-ohm, Continous Drain Current 30 A, Total Charge 5.8 nC. Tags: Surface Mount. More details for GPI65030DFN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    GPI65030DFN
  • Manufacturer
    GaNPower International
  • Description
    650 V, 29 to 70 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.9 to 2.9 V
  • Drain Source Voltage
    650 V
  • Drain Source Resistance
    29 to 70 milli-ohm
  • Continous Drain Current
    30 A
  • Total Charge
    5.8 nC
  • Input Capacitance
    241 pF
  • Output Capacitance
    61 pF
  • Turn-on Delay Time
    6 ns
  • Turn-off Delay Time
    15 ns
  • Rise Time
    12 ns
  • Fall Time
    13 ns
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    Switching Power Applications, Adapters, Quick Chargers
  • Dimensions
    8 x 8 mm

Technical Documents
View details on the manufacturer's website
View similar products