The IGI60F2727A1L AUMA1 from Infineon Technologies is a GaN Half-Bridge Transistor that is ideal for chargers, adapters, low-power motor drives, and LED lighting applications. This transistor has a drain-source voltage of up to 600 V, a gate threshold voltage of less than 1.2 V, and a drain-source on-resistance of 270 milli-ohms. It has a continuous drain current of up to 4.5 A and a pulsed drain current of less than 12.2 A. This JEDEC-qualified GaN transistor includes two GaN switches in a half-bridge configuration with integrated high- and low-side gate drivers. It has fast switched capabilities and robust galvanic isolation via coreless transformer technology ensures high immunity to common-mode transients. It supports single-voltage operation (8 V typical), a low-side current sensing option, and standard logic-level PWM input compatibility. This RoHS-compliant is available in a thermally enhanced surface-mount package that measures 8 x 8 mm.