The IGI60L2727B1M from Infineon is a GaN Transistor that is ideal for low-power motor drives and low-power SMPS applications. This transistor has a drain-source voltage of up to 600 V, a gate threshold voltage of less than 1.2 V, and a drain-source on-resistance of 270 milli-ohms. It has a continuous drain current of up to 4.8 A and a pulsed drain current of less than 9 A. This transistor includes two GaN switches in a half-bridge configuration with integrated high- and low-side gate drivers. It has an integrated ultra-fast low-resistance bootstrap diode and features application-configurable turn-on and turn-off speeds. This JEDEC-qualified GaN transistor supports the PWM input signal and provides fast input-to-output propagation. It has standard logic input levels compatible with digital controllers and a single gate driver supply voltage with fast UVLO recovery. 

This RoHS-compliant GaN transistor supports low-side open source for current sensing with an external shunt resistor. It is available in a thermally enhanced surface-mount package that measures 6 x 8 x 0.96 mm.