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IGLD60R190D1S

GaN Power Transistor by Infineon Technologies (46 more products)
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The IGLD60R190D1S from Infineon Technologies is a GaN Power Transistor with Gate Threshold Voltage 0.7 to 1.6 V, Drain Source Voltage 600 V, Drain Source Resistance 140 to 260 milli-ohm, Continous Drain Current 10 A, Pulsed Drain Current 23 A. Tags: Surface Mount. More details for IGLD60R190D1S can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGLD60R190D1S
  • Manufacturer
    Infineon Technologies
  • Description
    600 V, 140 to 260 milli-ohm GaN Transistor

General

  • Configuration
    Single
  • Industry
    Commercial, Industrial
  • Gate Threshold Voltage
    0.7 to 1.6 V
  • Drain Source Voltage
    600 V
  • Drain Source Resistance
    140 to 260 milli-ohm
  • Continous Drain Current
    10 A
  • Pulsed Drain Current
    23 A
  • Total Charge
    3.2 nC
  • Input Capacitance
    157 pF
  • Output Capacitance
    28 pF
  • Turn-on Delay Time
    6 ns
  • Turn-off Delay Time
    8 ns
  • Rise Time
    6 ns
  • Fall Time
    14 ns
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PG-LSON-8

Technical Documents
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