The IGOT65R055D2AUMA1 from Infineon Technologies is an Enhancement Mode GaN Power Transistor that is ideal for industrial, data center SMPS based on half-bridge hard and soft switching topologies such as totem pole PFC and high-frequency LLC, charger and adapter, and telecom applications. This transistor has a drain-source voltage of up to 650 V, a gate threshold voltage of less than 1.6 V, and a drain-source on-resistance of 66 milli-ohms. It has a continuous drain current of up to 28 A and a pulsed drain current of less than 60 A. This transistor is based on Infineon's CoolGaN G5 technology, which provides ultra-fast switching capabilities, low gate, and output charge, and reverse conduction without reverse-recovery charge to enhance high-efficiency power conversion. It has exceptional ESD robustness (2 kV HBM) and superior commutation ruggedness which guarantees reliable performance under challenging conditions.

This RoHS/JEDEC-qualified GaN transistor is fabricated using 200 mm (8 inches) wafer technology and is available in a surface mount package that measures 15.75 x 13.90 x 3.15 mm.