The INN040W048A from Innoscience is an Enhancement Mode GaN-on-Si High Electron Mobility Transistor (HEMT) that is ideal for over-voltage protection in the USB port of smartphones, switch circuit in multiple power supply systems, and high-side load switch applications. It is based on GaN-on-Si HEMT technology that blocks signals from both directions and has an ultra-low on-resistance. This transistor has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 2.4 V, and a drain-source on-resistance of less than 4.8 mΩ. It has a continuous drain current of up to 20 A and a pulsed drain current of less than 100 A. This transistor is available in a wafer-level package that measures 2.1 x 2.1 mm.
