The INN100EQ025A from Innoscience is an Enhancement Mode GaN-on-Silicon HEMT Power Transistor that is ideal for high-frequency DC-DC converters, battery management system (BMS) protection, RF envelope tracking, PC chargers, mobile power banks, and motor driver applications. It has a drain-source breakdown voltage of over 100 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of less than 2.8 milli-ohms. This GaN transistor has a continuous drain current of up to 80 A and a peak drain current of less than 320 A. It is manufactured using GaN-on-Silicon E-mode HEMT technology and offers very low gate charge and low on-resistance in a small footprint. This transistor is available in a surface-mount package that measures 3 x 5 mm.