The INN100W070A from Innoscience is an Enhancement Mode GaN-on-Silicon Power Transistor that is ideal for synchronous rectification,class-D audio, high frequency DC-DC converter, communication base station and motor driver applications. This GaN transistor has a drain-source voltage of over 100 V, a gate threshold voltage of 1.1 V, and a drain-source on-resistance of 5.5 milli-ohms. It has a continuous drain current of up to 29 A and a pulsed drain current of less than 125 A. This GaN-on-Si transistor has very low gate charge and low on-resistance. It ensures zero reverse recovery charge along with fast rise and fall times, making it ideal for high-speed switching applications. This transistor is available in a surface-mount package that measures 2.5 x 1.5 mm.