The INN100W135A-Q from Innoscience is an Automotive-Grade Enhancement-mode GaN Power Transistor. This transistor has a drain-source voltage of up to 100 V, a gate threshold voltage of less than 2.5 V, and a drain-source on-resistance of 10 milli-ohms. It has a continuous drain current of up to 18 A and a pulsed drain current of less than 75 A. This AEC-Q101-qualified transistor is designed based on GaN-on-Silicon E-mode high-electron-mobility-transistor (HEMT) technology. It offers a very low gate charge and has zero reverse recovery charge. This compact GaN transistor is available in a wafer-level package that measures 2.13 x 1.63 mm and is ideal for LiDAR, high power density DC-DC converters, class-D audio, and high-intensity headlamp applications.