The INN650TA050AH from Innoscience is a GaN Power Transistor with Gate Threshold Voltage 1.2 to 2.5 V, Drain Source Voltage 650 V, Drain Source Resistance 38 to 87 milli-ohm, Continous Drain Current 40 A, Pulsed Drain Current 84 A. Tags: Surface Mount. More details for INN650TA050AH can be seen below.